论文信息 - Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers - 字舞流文

Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers

B. Ozden | M. Hamilton | Dong-Joo Kim | Minseo Park | Shiqiang Wang | Yoonsung Chung | K. Yapabandara | V. Mirkhani | M. S. Sultan | M. P. Khanal | M. Sk | M. Sultan