Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates

Using graded refractive index, single quantum well GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates, we have obtained injection lasers with broad area pulsed thresholds of 3.5 kA/cm2 at 300 K. With the current flow restricted to 5‐μm‐wide stripes, pulsed thresholds of 130 mA and differential quantum efficiencies of 70% were obtained at 300 K. Pulsed oscillation has been obtained up to 375 K and continuous oscillation up to 160 K. The rapid degradation of the lasers suggests the growth of nonradiative regions in the active layer.

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