Multi-peak NDR and high PVCR in GaAs/InGaAs/InAs multi-stepped quantum well resonant interband tunnelling diodes
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[1] K. Köhler,et al. Resonant and nonresonant tunneling in GaAs/AlxGa1−xAs asymmetric double quantum wells , 1991 .
[2] Shawn Patrick Stapleton,et al. Scattering parameter measurements of resonant tunneling diodes up to 40 GHz , 1995 .
[3] R. C. Potter,et al. Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic , 1988 .
[4] L. Esaki,et al. Resonant tunneling in semiconductor double barriers , 1974 .
[5] A.G. MacDonald,et al. Well width dependence of tunneling current in double-quantum-well resonant interband tunnel diodes , 1992, IEEE Electron Device Letters.
[6] A. Seabaugh,et al. Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications , 1994 .
[7] T. C. L. G. Sollner,et al. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes , 1989 .
[8] T.L. Lee,et al. P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature , 1994, IEEE Electron Device Letters.
[9] Shawn Patrick Stapleton,et al. Effect of spacer layers on capacitance of resonant tunneling diodes , 1994 .
[10] J. Xu,et al. Resonant interband tunnel diodes , 1989 .
[11] T. Andersson,et al. A multiple-state memory cell based on the resonant tunneling diode , 1988, IEEE Electron Device Letters.