论文信息 - Bipolar transistor with minimized collector-to-base junction area

Bipolar transistor with minimized collector-to-base junction area

A novel n-p-n bipolar transistor structure with polysilicon base contacts and minimized collector-to-base junction area is described. Device data obtained for this structure show that while device parameters dependent on the device doping profile remain unaffected, a considerable improvement is obtained in device parameters dependent on the size of the collector-to-base junction area.

I. Antipov | I. Antipov

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