Characterization of OMVPE-grown AlGaInP by optical spectroscopy
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A1GaInP alloy grown by organometallic vapor phase epitaxy (OW/FE) was examined with various optical spectroscopic techniques; photoluminescence, electroref'lectance, Raman scattering, extended X-ray absorption fine structure, and with electron microscopy. It turns out that the band gap shrinkage observed in AlGaInP is caused by deviation of atomic position from the lattice sites of the normal zinc-blende lattice which is effected by the interaction of random distribution structure and long-range ordering. The long-range ordering is found to be specific to the (100) substrate plane. Anomally in low temperature photoluminescence which may be related to long- range ordering is also reported.
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