论文信息 - Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

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