Bulk hot-electron properties of cubic semiconductors
暂无分享,去创建一个
[1] K. Seeger,et al. The anisotropy of conductivity of n-type germanium in strong d.c. fields , 1965 .
[2] I. Yokota. On the Deviation from the Einstein Relation Observed for Diffusion of Ag+ Ions in α-Ag2S and Others , 1966 .
[3] A. Dargys,et al. Dependence of the Phenomenological Energy Relaxation Time on Electric Field in n‐Si and n‐Ge at 77 °K , 1972 .
[4] Peter A. Houston,et al. Electron drift velocity in n-GaAs at high electric fields , 1977 .
[5] C. Hamaguchi,et al. Microwave measurement of differential negative conductivity due to intervalley transfer of hot electrons in n-type GaAs , 1967 .
[6] C. Jacoboni,et al. Electron-electron in Monte Carlo transport calculations , 1972 .
[7] J. Groot,et al. Measurements of the current-field strength characteristic of n-type gallium arsenide using various high-power microwave techniques , 1967 .
[8] C. Pickering,et al. The effect of pressure on the high electric field instabilities in n-type GaAs , 1975 .
[9] C. Canali,et al. Hole drift velocity in silicon , 1975 .
[10] K. Seeger. Microwave Field Dependence of Drift Mobility in Germanium , 1959 .
[11] Michael A. Littlejohn,et al. Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering , 1977 .
[12] C. Jacoboni,et al. Velocity autocorrelation function and low-temperature mobility of electrons in silicon , 1975 .
[13] N. Sclar. Neutral Impurity Scattering in Semiconductors , 1956 .
[14] William Shockley,et al. The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .
[15] Ralph Bray,et al. DETERMINATION OF HOT CARRIER DISTRIBUTION FUNCTIONS FROM ANISOTROPIC FREECARRIER ABSORPTION IN P-TYPE GERMANIUM. , 1963 .
[16] T. Maloney,et al. Transient and steady‐state electron transport properties of GaAs and InP , 1977 .
[17] J. Nougier. Symmetry relations between the mobility and differential mobility-tensor components of cubic semiconductors in the hot carrier range , 1972 .
[18] A. M. Mazzone,et al. Current transport in narrow-base transistors , 1977 .
[19] C. Jacoboni,et al. A review of some charge transport properties of silicon , 1977 .
[20] W. Harrison. Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals , 1956 .
[21] The electrical conductivity of germanium , 1964 .
[22] H. Levinstein,et al. Determination of Compensation Density by Hall and Mobility Analysis in Copper-Doped Germanium , 1972 .
[23] D. E. Aspnes,et al. GaAs lower conduction-band minima: Ordering and properties , 1976 .
[24] V. Dalal. HOLE VELOCITY IN p‐GaAs , 1970 .
[25] J. W. Granville,et al. XXV. The Measurement of Drift Mobility in Germanium at High Electric Fields , 1956 .
[26] C. Canali,et al. Diffusion coefficient of holes in Ge , 1978 .
[27] P. Landsberg,et al. Two formulations of semiconductor transport equations , 1977 .
[28] J. Nash,et al. Experimental determination of highly concentration‐sensitive effects of intervalley electron‐electron scattering on electric‐field‐dependent repopulation in n‐Si at 77 K , 1974 .
[29] C. Erginsoy. Neutral Impurity Scattering in Semiconductors , 1950 .
[30] D. Bartelink,et al. High‐Field Diffusivity of Electrons in Silicon , 1971 .
[31] P. N. Butcher,et al. Calculation of the velocity-field characteristic for gallium arsenide , 1966 .
[32] H. D. Rees,et al. Calculation of steady state distribution functions by exploiting stability , 1968 .
[33] K. Lischka,et al. Hot electron faraday-effect and non-equivalent inter-valley transfer in n-type Ge , 1973 .
[34] C. Jacoboni,et al. Electron drift velocity in silicon , 1975 .
[35] B. Ridley,et al. Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference , 1977 .
[36] M. Lampert,et al. Current injection in solids , 1970 .
[37] G. Kino,et al. A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs , 1969 .
[38] J. Simmons,et al. Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions , 1977 .
[39] T. C. Mcgill,et al. Neutral impurity scattering in semiconductors , 1975 .
[40] Lino Reggiani,et al. Hole drift velocity in germanium , 1977 .
[41] W. Fawcett,et al. Monte Carlo determination of electron transport properties in gallium arsenide , 1970 .
[42] Dietrich Meyerhofer,et al. Physics of III-V compounds , 1964 .
[43] T. M. Sanders,et al. Acoustoelectric Effect in n-Type Germanium , 1959 .
[44] W. Fawcett,et al. Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minima , 1971 .
[45] Victor F. Weisskopf,et al. Theory of Impurity Scattering in Semiconductors , 1950 .
[46] T. B. Watkins,et al. The Possibility of Negative Resistance Effects in Semiconductors , 1961 .
[47] V. Riginos. Nonsaturating velocity-field characteristic of gallium arsenide experimentally determined from domain measurements , 1974 .
[48] H. Fröhlich,et al. On the theory of dielectric breakdown in solids , 1947, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[49] O. Wada,et al. Monte Carlo calculations of diffusion coefficient of hot electrons in n‐type GaAs , 1974 .
[50] D. J. Bartelink,et al. DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD , 1970 .
[51] L. Reggiani,et al. On the saturated drift velocity of electrons in Si from 77 °K to 500 °K , 1970 .
[52] W. Shockley,et al. Hot electrons in germanium and Ohm's law , 1951 .
[53] K. Seeger,et al. HARMONIC MIXING OF MICROWAVES BY WARM ELECTRONS IN GERMANIUM , 1966 .
[54] N. I. Meyer,et al. Method for Measuring Small Nonlinearities of Electric Characteristics , 1965 .
[55] E. Bonek. Millimeter‐wave investigation of electronic conduction in semiconducting III‐V compounds , 1972 .
[56] W. Sasaki,et al. Anisotropy of hot electrons in germanium , 1959 .
[57] M. H. Jørgensen. Warm-Electron Effects in n-Type Silicon and Germanium , 1967 .
[58] C. Canali,et al. High‐field diffusion of electrons in silicon , 1975 .
[59] C. Jacoboni. Generalization of Fick's Law for Non‐Local Complex Diffusion in Semiconductors , 1974 .
[60] M. Asche,et al. Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si , 1971 .
[61] R. N. Euwema,et al. Energy-Band Structure of Aluminum Arsenide , 1969 .
[62] J. D. Wiley. Polar Mobility of Holes in III-V Compounds , 1971 .
[63] R. Robson,et al. Diffusivity of Charge Carriers in Semiconductors in Strong Electric Fields , 1973 .
[64] M. Shur,et al. Transferred electron effects in n-GaAs and n-InP under hydrostatic pressure , 1978 .
[65] M. Nicolet,et al. Drift Velocity of Electrons in Silicon at High Electric Fields from 4.2° to 300°K , 1969 .
[66] G. S. Kino,et al. Transport Properties of GaAs , 1968 .
[67] S Bosi,et al. Acoustic scattering in a two-band system and its application to hole transport properties in cubic semiconductors , 1979 .
[68] OBSERVATION OF MICROWAVE REPOPULATION MODULATION IN n‐Si AT 77 °K , 1970 .
[69] J. W. Granville,et al. A study of energy-loss processes in germanium at high electric fields using microwave techniques , 1961 .
[70] W. Fawcett,et al. Calculation of the hot electron diffusion rate for GaAs , 1969 .
[71] John J. Hall,et al. Electronic Effects in the Elastic Constants of n -Type Silicon , 1967 .
[72] J. A. Van Vechten,et al. Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies , 1969 .
[73] A. L. McWhorter,et al. The Gunn effect in polar semiconductors , 1966 .
[74] B. Nag. Theory of electrical transport in semiconductors , 1972 .
[75] Ž. Kancleris,et al. Influence of E–E scattering on the phenomenological energy relaxation time in nonpolar semiconductors , 1975 .
[76] H. Levinstein,et al. Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in n-Type Silicon , 1973 .
[77] E. J. Ryder,et al. Mobility of Holes and Electrons in High Electric Fields , 1953 .
[78] R. Bray,et al. Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in p-Type Germanium , 1964 .
[79] H. Ehrenreich. Transport of electrons in intrinsic InSb , 1959 .
[80] L. Reggiani,et al. Scattering probabilities for holes. II. Polar optical scattering mechanism , 1973 .
[81] R. Stratton. The influence of interelectronic collisions on conduction and breakdown in polar crystals , 1958, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[82] G. Glover. EFFECTS OF DOPING PROFILE ON THE MEASURED VELOCITY‐ELECTRIC FIELD CHARACTERISTIC OF n‐TYPE GaAs , 1970 .
[83] K. Hess,et al. Energie-Relaxation warmer Ladungsträger in Germanium und Silizium , 1969 .
[84] J. Nougier,et al. Mobility, Noise Temperature, and Diffusivity of Hot Holes in Germanium , 1973 .
[85] A. R. Hutson,et al. Mechanism of the gunn effect from a pressure experiment , 1965 .
[86] C. Jacoboni,et al. Noise and diffusion of hot holes in Si , 1978 .
[87] M.A.C.S. Brown. Deviations from Ohm's law in germanium and silicon , 1961 .
[88] A. Reklaitis,et al. DIFFUSION COEFFICIENT OF HOT ELECTRONS IN GaAs , 1978 .
[89] J. Barker,et al. Quantum transport theory of high-field conduction in semiconductors , 1973 .
[90] L. Reggiani,et al. Bloch states mixing in Si conduction band , 1973 .
[91] C. Canali,et al. On the diffusivity of holes in silicon , 1979 .
[92] B. N. Brockhouse,et al. Lattice Vibrations in Silicon and Germanium , 1959 .
[93] E. Constant,et al. Monte Carlo calculation of microwave and far‐infrared hot‐carrier mobility in N‐Si: Efficiency of millimeter transit‐time oscillators , 1978 .
[94] V. I. Startsev,et al. Effect of the Superconducting Transition on the Creep in Lead , 1970 .
[95] R. Crandall. Low-Temperature Non-Ohmic Electron Transport in GaAs , 1970 .
[96] Infrared Faraday effect and electron transfer in many valley semiconductors : n GaSb☆ , 1970 .
[97] A. Reklaitis,et al. Monte Carlo treatment of electron-electron collisions , 1975 .
[98] C. Jacoboni,et al. Intervalley diffusion of hot electrons in germanium , 1978 .
[99] A. Mircea,et al. Determination of saturated electron velocity in GaAs , 1975 .
[100] George Weiss,et al. Fluctuation Phenomena in Solids , 1965 .
[101] C. Herring,et al. Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering , 1956 .
[102] Jr John E. Smith. Longitudinal Anisotropy of the High-Field Conductivity of n -Type Germanium at Room Temperature , 1969 .
[103] M. Asche,et al. Electric Conductivity of Hot Carriers in Si and Ge , 1969 .
[104] D. K. Schroder,et al. The doping concentrations of indium‐doped silicon measured by Hall, C‐V, and junction‐breakdown techniques , 1978 .
[105] P. S. Hauge,et al. Microwave measurement of the velocity-field characteristic of GaAs , 1970 .
[106] C. Jacoboni,et al. Monte Carlo Calculations on Electron Transport in CdTe , 1972 .
[107] L. Reggiani,et al. Nonparabolicity and intrinsic carrier concentration in Si and Ge , 1975 .
[108] P. Lebwohl,et al. Direct Microscopic Simulation of Gunn‐Domain Phenomena , 1971 .
[109] C. Jacoboni,et al. Negative differential mobility in III–V and II–VI semiconducting compounds , 1971 .
[110] Dietrich Wolf,et al. Noise in physical systems , 1978 .
[111] E. Kane,et al. Energy band structure in p-type germanium and silicon , 1956 .
[112] Marvin L. Cohen,et al. Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures , 1966 .
[113] G. Majni,et al. Warped band and anisotropy of the hot-hole drift velocity in Si between 300 and 430 K , 1975 .
[114] H. Ruegg,et al. Measurement of the drift velocity of holes in silicon at high-field strengths , 1967 .
[115] W. Thirring,et al. The Boltzmann Equation , 1973 .
[116] J. Gunn,et al. Measurement of the negative differential mobility of electron in GaAs , 1966 .
[117] L. Reggiani,et al. Electron energy relaxation time in Si and Ge , 1973 .
[118] W. Dumke. High-Field Conductivity of the〈111〉Valleys of Ge , 1970 .
[119] D. Lynch,et al. Ordering and Absolute Energies of the L6c and X6c Conduction Band Minima in GaAs , 1976 .
[120] K. S. Champlin,et al. Warm-Carrier dc Transport in n Si , 1972 .
[121] V. Svelto,et al. ERRATUM: Indirect Electron Drift Velocity versus Electric Field Measurement in GaAs , 1971 .
[122] W Fawcett,et al. Effect of field-dependent diffusion on stable domain propagation in the Gunn effect , 1967 .
[123] L. W. James,et al. Location of the L 1 and X 3 Minima in GaAs as Determined by Photoemission Studies , 1968 .
[124] F. Blatt,et al. Physics of Electronic conduction in Solids , 1968 .
[125] M. O. Vassell,et al. High-Field Transport inn- Type GaAs , 1968 .
[126] C. Hilsum,et al. Transferred electron amplifiers and oscillators , 1962, IRE Transactions on Electron Devices.
[127] L. Reggiani. The anisotropy of the hot-hole drift velocity in Ge☆ , 1976 .
[128] C. Jacoboni,et al. Effects of band non-parabolicity on electron drift velocity in silicon above room temperature , 1975 .
[129] T. Sigmon,et al. DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON , 1969 .
[130] M. Asche,et al. Conductivity of Hot Holes in Silicon at 77 °K , 1970 .
[131] J. L. Moll,et al. Electron drift velocity in avalanching silicon diodes , 1967 .
[132] D. Ferry. First-order optical and intervalley scattering in semiconductors , 1976 .