On the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuits
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Ching-Te Chuang | Kenneth Chin | Emmanuel F. Crabbe | James H. Comfort | Johannes M. C. Stork | G. L. Patton | J. Comfort | E. Crabbé | G. Patton | J. Stork | C. Chuang | K. Chin
[1] Ching-Te Chuang,et al. High-speed low-power charge-buffered active-pull-down ECL circuit , 1990, Proceedings on Bipolar Circuits and Technology Meeting.
[2] J.M.C. Stork,et al. Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology , 1990, International Technical Digest on Electron Devices.
[3] M. Usami,et al. SPL (super push-pull logic) a bipolar novel low-power high-speed logic circuit , 1989, Symposium 1989 on VLSI Circuits.
[4] Ching-Te Chuang,et al. High-speed low-power charge-buffered active-pull-down ECI circuit , 1991 .
[5] Ching-Te Chuang,et al. A 23-ps/2.1-mW ECL gate with an AC-coupled active pull-down emitter-follower stage , 1989 .
[6] D. Harame,et al. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors , 1990, IEEE Electron Device Letters.
[7] G.L. Patton,et al. Impact of processing parameters on base current in polysilicon contacted bipolar transistors , 1985, 1985 International Electron Devices Meeting.
[8] Keith A. Jenkins,et al. Sub-15 ps gate delay with new AC-coupled active pull-down ECL circuit , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[9] G.L. Patton,et al. 63-75 GHz fT SiGe-base heterojunction bipolar technology , 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.
[10] H. Goto. Future Bipolar Device Structures , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.
[11] Ching-Te Chuang,et al. A 23 ps/2.1 mW ECL gate , 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.