Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

Researchers demonstrate a nonvolatile infrared memory cell operating in the optical communication wavebands. Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS2/PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 104 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS2 to PbS. The demonstrated MoS2 heterostructure–based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

[1]  G. Konstantatos,et al.  Hybrid graphene-quantum dot phototransistors with ultrahigh gain. , 2011, Nature nanotechnology.

[2]  J. Eom,et al.  Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenide field-effect transistors , 2016 .

[3]  Edward H. Sargent,et al.  Photovoltage field-effect transistors , 2017, Nature.

[4]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[5]  Tania Lasanta,et al.  Interface Engineering in Hybrid Quantum Dot–2D Phototransistors , 2016 .

[6]  Alexander Star,et al.  Nanotube optoelectronic memory devices , 2004 .

[7]  J. Zemel,et al.  The PbSSi heterojunction II: Electrical properties , 1980 .

[8]  Juwon Lee,et al.  Monolayer optical memory cells based on artificial trap-mediated charge storage and release , 2017, Nature Communications.

[9]  Wei Chen,et al.  Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. , 2014, ACS nano.

[10]  Mun Seok Jeong,et al.  Negative and positive persistent photoconductance in graphene. , 2011, Nano letters.

[11]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[12]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[13]  E. Martinelli,et al.  Volatile Compounds Detection by IR Acousto-Optic Detectors , 2009 .

[14]  M. Eginligil,et al.  Low temperature photoresponse of monolayer tungsten disulphide , 2014 .

[15]  Gabriele Navickaite,et al.  Hybrid 2D–0D MoS2–PbS Quantum Dot Photodetectors , 2015, Advanced materials.

[16]  Xinwei Wang,et al.  The hot carrier diffusion coefficient of sub-10 nm virgin MoS2: uncovered by non-contact optical probing. , 2017, Nanoscale.

[17]  S. L. Li,et al.  High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. , 2013, Nanoscale.

[18]  J. He,et al.  Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy , 2013, 1303.0749.

[19]  Wei Lu,et al.  Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire. , 2016, Nano letters.

[20]  Andras Kis,et al.  Ultrasensitive photodetectors based on monolayer MoS2. , 2013, Nature nanotechnology.

[21]  Kian Ping Loh,et al.  High‐Gain Graphene‐Titanium Oxide Photoconductor Made from Inkjet Printable Ionic Solution , 2010, Advanced materials.

[22]  P. Ajayan,et al.  Two-dimensional non-volatile programmable p-n junctions. , 2017, Nature nanotechnology.

[23]  Chang-Hua Liu,et al.  Graphene photodetectors with ultra-broadband and high responsivity at room temperature. , 2014, Nature nanotechnology.

[24]  Yong-Wei Zhang,et al.  Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2 , 2013, 1312.3729.

[25]  H-S Philip Wong,et al.  Memory leads the way to better computing. , 2015, Nature nanotechnology.

[26]  R. Gorbachev.  Van der Waals heterostructures , 2014, Nature Reviews Methods Primers.

[27]  Kai Xu,et al.  Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance. , 2015, Nano letters.

[28]  Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. , 2014, Nature communications.

[29]  Bo Li,et al.  Optoelectronic memory using two-dimensional materials. , 2015, Nano letters.

[30]  Dominique Vuillaume,et al.  Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors , 2006 .

[31]  Chaozheng He,et al.  Repairing sulfur vacancies in the MoS2 monolayer by using CO, NO and NO2 molecules , 2016 .

[32]  Piero Pianetta,et al.  Photon-enhanced thermionic emission for solar concentrator systems. , 2010, Nature materials.

[33]  Harry J. R. Dutton,et al.  Understanding Optical Communications , 1998 .

[34]  A. Rogalski.  Infrared detectors: status and trends , 2003 .

[35]  Gerasimos Konstantatos,et al.  Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials , 2016 .

[36]  H. Suzuki,et al.  40-gb/s 32-bit optical packet compressor-decompressor based on an optoelectronic memory , 2004, IEEE Photonics Technology Letters.

[37]  Lain-Jong Li,et al.  High‐Gain Phototransistors Based on a CVD MoS2 Monolayer , 2013, Advanced materials.

[38]  Arindam Ghosh,et al.  Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. , 2013, Nature nanotechnology.

[39]  T. Taniguchi,et al.  Photo-thermionic effect in vertical graphene heterostructures , 2016, Nature Communications.

[40]  Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors , 2015, Scientific reports.

[41]  H. Queisser,et al.  Decay kinetics of persistent photoconductivity in semiconductors. , 1986, Physical review. B, Condensed matter.

[42]  M. Hersam,et al.  Mixed-dimensional van der Waals heterostructures. , 2016, Nature materials.

[43]  J. Shibata,et al.  Integration of InGaAsP/InP optoelectronic bistable switches with a function of optical erasing , 1990, IEEE Electron Device Letters.