Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer

Abstract Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10 −7  A/cm 2 ), capacitance of 28.9 nF/cm 2 , and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO 2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility . This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.

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