Device modeling of fully depletable CCDs

Abstract The concept of a new type of a charge coupled device (CCD) is presented: a fully depletable three phase pn-CCD for majority carriers. The simulation calculations of the potential and charge carrier distributions demonstrate the feasibility of these detectors fabricated from high resistivity silicon. Limitations in performance and their origins will be discussed. Special attention is given to the influence of fixed charges in the silicon dioixde-silicon interface on the potential and on the electron and hole concentrations close to the surface. Finally we compare measurements with the predictions from the device simulation.