The relationship between transistor-based and circuit-based reliability assessment for digital circuits

Logic, analog, RF, SRAM, and DRAM circuits respond differently to NBTI and HCI induced time dependent parametric shifts. We analyze digital logic susceptibility to these transistor degradation mechanisms and identify the benefits of simulation based aging-induced reliability assurance at the product level.

[1]  A. Bravaix,et al.  The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs , 2007, IEEE Transactions on Device and Materials Reliability.

[2]  T. Grasser,et al.  Ubiquitous relaxation in BTI stressing—New evaluation and insights , 2008, 2008 IEEE International Reliability Physics Symposium.

[3]  Jen-Hao Lee,et al.  Characterization of NBTI-Induced Interface State and Hole Trapping in SiON Gate Dielectrics of p-MOSFETs , 2010, IEEE Transactions on Device and Materials Reliability.

[4]  P. Abramowitz,et al.  Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[5]  T. Grasser,et al.  The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[6]  S. Mahapatra,et al.  Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation , 2007, IEEE Transactions on Electron Devices.

[7]  R. Wong,et al.  Impact of NBTI Induced Statistical Variation to SRAM Cell Stability , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[8]  A. Bravaix,et al.  Novel hot-carrier AC-DC design guidelines for advanced CMOS nodes , 2008, 2008 IEEE International Reliability Physics Symposium.

[9]  Muhammad Ashraful Alam,et al.  Reliability- and Process-variation aware design of integrated circuits — A broader perspective , 2008, 2011 International Reliability Physics Symposium.

[10]  T. Nigam,et al.  Accurate product lifetime predictions based on device-level measurements , 2009, 2009 IEEE International Reliability Physics Symposium.