Chapter 4 - Electron Resist Process Modeling

Publisher Summary Theoretical modeling of the electron-beam resist process is a valuable aid to experimental design and interpretation. General modeling of electron scattering and energy deposition in resist-film–silicon–substrate targets has been accomplished with Monte Carlo calculations. The technology of electron-beam lithography (EBL) depends on the interaction of a focused electron beam with a polymeric resist film or multilayer film structure on a non-polymeric substrate. In general, electron irradiation of a polymeric film produces microstructural changes, such as polymer chain scission in positive resists or polymer chain cross-linking in negative resists. Such changes produce patterns in the resist film with differing solubility rates that correspond to the pattern of the original electron-beam exposure pattern. The rapid investigation of EBL processes through simulation is an important component of the art and science of the technology and will become even more important in the era of very large scale integrated (VLSI). As EBL becomes more mature and pattern dimensions become ever smaller, process simulation will become a necessity.

[1]  Stuart L. Meyer,et al.  Data analysis for scientists and engineers , 1975 .

[2]  F. Dill,et al.  In-situ measurement of dielectric thickness during etching or developing processes , 1975, IEEE Transactions on Electron Devices.

[3]  Mihir Parikh,et al.  Energy deposition functions in electron resist films on substrates , 1979 .

[4]  David F. Kyser.  Spatial resolution limits in electron beam nanolithography , 1983 .

[5]  R. J. Hawryluk,et al.  Exposure and development models used in electron beam lithography , 1981 .

[6]  An exposure model for electron-sensitive resists , 1974 .

[7]  A. Neureuther,et al.  Electron-beam resist edge profile simulation , 1979, IEEE Transactions on Electron Devices.

[8]  P. Thornton.  Electron Physics in Device Microfabrication. I General Background and Scanning Systems , 1979 .

[9]  Polysiloxane resist as a probe for energy deposited in electron beam exposed resists , 1983 .

[10]  D. F. Kyser,et al.  Computer Simulation of Electron-Beam Resist Profiles , 1980, IBM J. Res. Dev..

[11]  E. Pitts,et al.  A Photographic Theory of Crosslinking Resists , 1981 .

[12]  F. Jones,et al.  RD3D (computer simulation of resist development in three dimensions) , 1981, IEEE Transactions on Electron Devices.

[13]  Wayne M. Moreau,et al.  State Of Art Of Acrylate Resists: An Overview Of Polymer Structure And Lithographic Performance , 1983 .

[14]  C. Kittel.  Introduction to solid state physics , 1954 .

[15]  Kenji Murata,et al.  Monte Carlo simulation of fast secondary electron production in electron beam resists , 1981 .

[16]  R. J. Hawryluk,et al.  Energy dissipation in a thin polymer film by electron beam scattering , 1974 .

[17]  D. P. Kern,et al.  Point exposure distribution measurements for proximity correction in electron beam lithography on a sub‐100 nm scale , 1987 .

[18]  P. Thornton.  Electron Physics in Device Microfabrication. II Electron Resists, X-Ray Lithography, and Electron Beam Lithography Update , 1980 .

[19]  Gel Formation in Negative Electron Resists , 1976 .