Dispersion of Heat Flux Sensors Manufactured in Silicon Technology

In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide semi-conductor) compatible 3-in technology. In particular, we have studied the performance dispersion of our sensors and linked these to the physical characteristics of dispersion of the materials used. This information is mandatory to ensure low-cost manufacturing and especially to reduce production rejects during the fabrication process. The results obtained show that the measured sensitivity of the sensors is in the range 3.15 to 6.56 μV/(W/m2), associated with measured resistances ranging from 485 to 675 kΩ. The dispersions correspond to a Gaussian-type distribution with more than 90% determined around average sensitivity Se¯ = 4.5 µV/(W/m2) and electrical resistance R¯ = 573.5 kΩ within the interval between the average and, more or less, twice the relative standard deviation.

[1]  H. Baltes,et al.  Thermoelectric infrared sensors by CMOS technology , 1992, IEEE Electron Device Letters.

[2]  M. Boutchich,et al.  Package-free infrared micro sensor using polysilicon thermopile , 2005 .

[3]  T. Lasri,et al.  Probing technique for localized thermal conductivity measurement , 2015 .

[4]  Tuami Lasri,et al.  Unpackaged infrared thermoelectric microsensor realised on suspended membrane by silicon technology , 2012 .

[5]  Daniel Dupont,et al.  Direct measurement of the latent heat of evaporation by flowmetric method , 2005, IEEE Transactions on Instrumentation and Measurement.

[6]  Luca Boarino,et al.  Thermal properties of porous silicon layers , 1997 .

[7]  M. Maeda,et al.  [Heat conduction]. , 1972, Kango kyoshitsu. [Nursing classroom].

[8]  Chengkuo Lee,et al.  Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process , 2013 .

[9]  Maurits ten Bosch,et al.  La transmission de la chaleur , 1930 .

[10]  Tuami Lasri,et al.  Quasi-monolithic heat flux microsensor based on porous silicon boxes , 2010 .

[11]  M. Boutchich,et al.  Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K , 2002, IEEE Electron Device Letters.

[12]  Hermann Sandmaier,et al.  The Thermal Conductivity of Porous Silicon , 1994 .

[13]  D. Leclercq,et al.  Power dissipated measurement of an ultrasonic generator in a viscous medium by flowmetric method. , 2008, Ultrasonics sonochemistry.