Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
暂无分享,去创建一个
J. Millan | D. Tournier | A. Perez-Tomas | N. Mestres | P. Godignon | N. Mestres | J. Millán | D. Tournier | A. Pérez‐Tomás | P. Godignon | R. Perez | R. Pérez
[1] Dominique Tournier,et al. Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment , 2005 .
[2] P. Godignon,et al. A Highly Effective Edge Termination Design for SiC Planar High Power Devices , 2004 .
[3] James A. Cooper,et al. Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC , 2004 .
[4] D. Planson,et al. Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers , 2003 .
[5] J. Neil Merrett,et al. Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination , 2003 .
[6] Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diode , 2003 .
[7] Adrian Powell,et al. SiC materials-progress, status, and potential roadblocks , 2002, Proc. IEEE.
[8] H. Matsunami,et al. Anisotropy in breakdown field of 4H–SiC , 2002 .
[9] Jian H. Zhao,et al. A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination , 2002 .
[10] M. V. Rao. Maturing ion-implantation technology and its device applications in SiC , 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
[11] Tangali S. Sudarshan,et al. Design rules for field plate edge termination in SiC Schottky diodes , 2001 .
[12] Florin Udrea,et al. Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage , 2001 .
[13] John D. Cressler,et al. Design of single and multiple zone junction termination extension structures for SiC power devices , 2001 .
[14] Toshihiko Hayashi,et al. 12-19 kV 4H-SiC pin diodes with low power loss , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
[15] S. Saddow,et al. Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination , 2001 .
[16] John D. Cressler,et al. Design and fabrication of planar guard ring termination for high-voltage SiC diodes , 2000 .
[17] P. Friedrichs,et al. Characterization of fast 4.5 kV SiC p-n diodes , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
[18] R. Gutmann,et al. Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers , 2000 .
[19] Li Hui Cao,et al. Theoretical and Experimental Study of 4H-SiC Junction Edge Termination , 2000 .
[20] Lateral spread of implanted ion distributions in 6HSiC: simulation , 1999 .
[21] Andrew J. Steckl,et al. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination , 1999 .
[22] G. Charitat,et al. DESIGN METHODOLOGY AND SIMULATION TOOL FOR FLOATING RING TERMINATION TECHNIQUE , 1998 .
[23] Valery Axelrad. Grid quality and its influence on accuracy and convergence in device simulation , 1998, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[24] B. J. Baliga,et al. Modern Power Devices , 1987 .
[25] V.A.K. Temple,et al. Junction termination extension for near-ideal breakdown voltage in p-n junctions , 1986, IEEE Transactions on Electron Devices.