Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

This paper presents the design, fabrication, and comparison of different planar edge termination techniques on high-voltage 4H-SiC PiN diodes, including single- and double-junction termination extensions (JTE), floating guard rings, and a novel termination structure, the so-called "floating guard rings-assisted JTE." The influence of the anode metal edge location over different periphery regions on the breakdown voltage is also discussed, as well as the effect of a field plate and the passivation layer on the reverse characteristics. The terminations were studied by way of two-dimensional numerical device simulations and they are confirmed by fabricating and measuring 1.7-kV 4H-SiC aluminum implanted PiN diodes. It is shown that the novel termination structure provides the best results achieving the highest breakdown voltages with good production yield. The fabricated diodes also exhibited excellent forward current characteristics with a low on-state voltage drop of 3.0 V at 100 A/cm/sup 2/, thanks to the low specific contact resistivity achieved (/spl rho//sub C/=1/spl middot/10/sup -5/ /spl Omega/cm/sup 2/) after the high-temperature treatment of the anode contact. High-temperature reverse current-voltage measurements were also carried out and are presented and discussed.

[1]  Dominique Tournier,et al.  Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment , 2005 .

[2]  P. Godignon,et al.  A Highly Effective Edge Termination Design for SiC Planar High Power Devices , 2004 .

[3]  James A. Cooper,et al.  Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC , 2004 .

[4]  D. Planson,et al.  Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers , 2003 .

[5]  J. Neil Merrett,et al.  Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination , 2003 .

[6]  Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diode , 2003 .

[7]  Adrian Powell,et al.  SiC materials-progress, status, and potential roadblocks , 2002, Proc. IEEE.

[8]  H. Matsunami,et al.  Anisotropy in breakdown field of 4H–SiC , 2002 .

[9]  Jian H. Zhao,et al.  A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination , 2002 .

[10]  M. V. Rao.  Maturing ion-implantation technology and its device applications in SiC , 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

[11]  Tangali S. Sudarshan,et al.  Design rules for field plate edge termination in SiC Schottky diodes , 2001 .

[12]  Florin Udrea,et al.  Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage , 2001 .

[13]  John D. Cressler,et al.  Design of single and multiple zone junction termination extension structures for SiC power devices , 2001 .

[14]  Toshihiko Hayashi,et al.  12-19 kV 4H-SiC pin diodes with low power loss , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[15]  S. Saddow,et al.  Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination , 2001 .

[16]  John D. Cressler,et al.  Design and fabrication of planar guard ring termination for high-voltage SiC diodes , 2000 .

[17]  P. Friedrichs,et al.  Characterization of fast 4.5 kV SiC p-n diodes , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[18]  R. Gutmann,et al.  Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers , 2000 .

[19]  Li Hui Cao,et al.  Theoretical and Experimental Study of 4H-SiC Junction Edge Termination , 2000 .

[20]  Lateral spread of implanted ion distributions in 6HSiC: simulation , 1999 .

[21]  Andrew J. Steckl,et al.  High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination , 1999 .

[22]  G. Charitat,et al.  DESIGN METHODOLOGY AND SIMULATION TOOL FOR FLOATING RING TERMINATION TECHNIQUE , 1998 .

[23]  Valery Axelrad.  Grid quality and its influence on accuracy and convergence in device simulation , 1998, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[24]  B. J. Baliga,et al.  Modern Power Devices , 1987 .

[25]  V.A.K. Temple,et al.  Junction termination extension for near-ideal breakdown voltage in p-n junctions , 1986, IEEE Transactions on Electron Devices.