论文信息 - Gate current injection initiated by electron band-to-band tunneling in MOS devices

Gate current injection initiated by electron band-to-band tunneling in MOS devices

A substrate hot-electron injection across the gate oxide initiated by electron band-to-band tunneling in p-type silicon is discussed. The injection electrons are generated by the energetic holes which are originally left behind by the band-to-band tunneling electrons. The injection can be easily controlled by an appropriate bias to a nearby n/sup +/ diffusion, and the injection efficiency can be as high as 10/sup -2/. Due to the small oxide field during injection, the electron fluence through the oxide before failure is much higher than under a Fowler-Nordheim tunneling stressing. These advantages make this band-to-band tunneling induced substrate hot-electron injection a possible programming mechanism for nonvolatile memories.<<ETX>>

C.W. Teng | D.J. Coleman | I.-C. Chen

[1] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[2] T.-C. Ong,et al. Modeling of substrate current in p-MOSFET's , 1987, IEEE Electron Device Letters.

[3] C.W. Teng,et al. Interface trap-enhanced gate-induced leakage current in MOSFET , 1989, IEEE Electron Device Letters.

[4] Chenming Hu,et al. Correlation between substrate and gate currents in MOSFET's , 1982, IEEE Transactions on Electron Devices.

[5] Chi Chang,et al. Corner-field induced drain leakage in thin oxide MOSFETs , 1987, 1987 International Electron Devices Meeting.

[6] T.Y. Chan,et al. The impact of gate-induced drain leakage current on MOSFET scaling , 1987, 1987 International Electron Devices Meeting.

[7] W. Richardson,et al. A new three-terminal tunnel device , 1987, IEEE Electron Device Letters.

[8] T. H. Ning,et al. Hot-electron emission from silicon into silicon dioxide , 1978 .

[9] J. F. Verwey,et al. Nonavalanche injection of hot carriers into SiO2 , 1973 .

[10] Sanjay K. Banerjee,et al. Leakage mechanisms in the trench transistor DRAM cell , 1988 .

[11] S. Holland,et al. Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides , 1986, 1986 International Electron Devices Meeting.