Effect of process parameters on material removal rate in chemical mechanical polishing of Si(100)

The effect of changing process parameters on the material removal rate in chemical mechanical polishing (CMP) of Si(100) is examined. A bench-top machine and silica based slurries were used. The removal rate increases sublinearly with the applied pressure, plate speed, and slurry silica concentration. The removal rate increases in the beginning for new stock removal pads. This is in contrast to planarization pads, for which the removal rate decreases from the beginning when polishing SiO"2. A lapped wafer exhibits a lower removal rate. To investigate the nonuniformity, the removal of polysilicon on top of oxide was investigated, which gave a rather nonuniform removal.

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