Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation

This paper proposes, for the first time, the concept of programmable logic circuit realized with single-electron transistors (SETs). An SET having nonvolatile memory function is a key element for the programmable SET logic. The writing and erasing operations of the nonvolatile memory function make it possible to tune the phase of Coulomb oscillations. The half-period phase shift induced by the memory function makes the function of SETs complementary to that of the conventional SETs. As a result, SETs having nonvolatile memory function have the functionality of both the conventional (nMOS-like) SETs and the complementary (pMOS-like) SETs. By utilizing this fact, the function of SET circuits can be programmed with great flexibility, on the basis of the information stored by the memory functions. We have successfully fabricated SETs that operate at room temperature and observed the highest room-temperature peak-to-valley current ratio of Coulomb oscillations. The operation of the programmable SET logic is demonstrated using the room-temperature operating SETs. This is the first demonstration of room-temperature SET logic operation. The proposed programmable SET logic provides the potential for low-power, intelligent LSI chips suitable for mobile applications.

[1]  Yasuo Takahashi,et al.  Fabrication technique for Si single-electron transistor operating at room temperature , 1995 .

[2]  K. Matsuzawa,et al.  Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits , 2000 .

[3]  Ken Uchida,et al.  A new design scheme for logic circuits with single electron transistors , 1999 .

[4]  Paul Meakin,et al.  Fractals, scaling, and growth far from equilibrium , 1998 .

[5]  Ken Uchida,et al.  Room-temperature operation of multifunctional single-electron transistor logic , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[6]  Y. Takahashi,et al.  Single-electron pass-transistor logic: operation of its elemental circuit , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[7]  John R. Tucker,et al.  Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[8]  Randall L. Geiger,et al.  VLSI Design Techniques for Analog and Digital Circuits , 1989 .

[9]  A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector , 1999 .

[10]  Shinichi Takagi,et al.  Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film , 2001 .

[11]  Yasuo Takahashi,et al.  Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors , 1998 .

[12]  P. Lee Variable-Range Hopping in Finite One-Dimensional Wires , 1984 .

[13]  H. Inokawa,et al.  A multiple-valued logic with merged single-electron and MOS transistors , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[14]  Toshiro Hiramoto,et al.  Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate , 1996 .

[15]  Michel Devoret,et al.  Single Charge Tunneling , 1992 .

[16]  Stephen Y. Chou,et al.  Silicon single-electron quantum-dot transistor switch operating at room temperature , 1998 .

[17]  Kazuo Nakazato,et al.  A memory cell with single-electron and metal-oxide-semiconductor transistor integration , 1999 .

[18]  Ashok K. Sharma,et al.  Programmable logic handbook , 1998 .

[19]  Yasuo Takahashi,et al.  Multigate single-electron transistors and their application to an exclusive-OR gate , 2000 .

[20]  Masumi Saitoh,et al.  Large Electron Addition Energy above 250 meV in a Silicon Quantum Dot in a Single-Electron Transistor , 2001 .

[21]  Yasuo Takahashi,et al.  Si complementary single-electron inverter with voltage gain , 2000 .