论文信息 - Strain measurements by channeling angular scans

Strain measurements by channeling angular scans

We demonstrate the first direct measurement of strain in InxGa1−xAs/GaAs strained‐layer superlattices by ion channeling angular scans. This technique permits quantitative measurement of the strain without requiring computer simulations of dechanneling. The measurements are generally applicable to the study of strain in heteroepitaxial layers.

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