Heterojunction bipolar transistors for high speed integrated circuits

The unique characteristics of heterojunction bipolar transistors (HBTs), their fabrication, state-of-the-art performance and applications are discussed. The future directions of HBT research and commercialization, including new material systems and advanced device structures, are addressed. HBTs are compared with other devices which operate in the GHz frequency range. These devices include bipolar junction transistors and field effect transistors. A discussion of HBT materials is presented.<<ETX>>

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