High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC

In this paper, a novel high-voltage CMOS (HV-CMOS) structure and a compatible bulk-silicon (BS) CMOS process for color plasma display panel (PDP) data driver ICs have been proposed. The breakdown voltage and the current of the PDP data driver IC using this technology were 100 V and 42 mA, respectively. The rise and fall time of the new PDP data driver IC was 19 and 23 ns, respectively. The cost was also reduced by 20% by using the BS substrate material compared with the silicon-on-isolator (SOI) material.

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