论文信息 - Physical characterization of HfO 2 deposited on Ge substrates by MOCVD. - 字舞流文

Physical characterization of HfO 2 deposited on Ge substrates by MOCVD.

Stefan Kubicek | Marc Meuris | Matty Caymax | S. De Gendt | Bert Brijs | Chao Zhao | S. Van Elshocht | Ivo Teerlinck | J. Van Steenbergen | B. Onsia | T. Conard | O. Richard | M. M. Heyns

[1] M. Caymax,et al. Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO2 Layers on Si Substrates , 2004 .

[2] Krishna C. Saraswat,et al. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy , 2003 .

[3] Toshio Ogino,et al. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study , 1995 .