High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method

[1]  B. Tell,et al.  Raman Effect in Zinc Oxide , 1966 .

[2]  I. Suemune,et al.  Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy , 2000 .

[3]  K. Ellmer,et al.  Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties , 2000 .

[4]  J. Blachère,et al.  Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer , 2001 .

[5]  B. Li,et al.  Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer , 2004 .

[6]  T. Yao,et al.  High‐quality ZnO epilayers grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy , 2004 .

[7]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[8]  L. M. Kukreja,et al.  Buffer-assisted low temperature growth of high crystalline quality ZnO films using Pulsed Laser Deposition , 2005 .

[9]  Junjie Zhu,et al.  Heteroepitaxy of ZnO film on Si (111) substrate using a 3C–SiC buffer layer , 2005 .

[10]  MOCVD growth of ZnO films on Si(1 1 1) substrate using a thin AlN buffer layer , 2005 .

[11]  Li-ping Zhu,et al.  Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering , 2007 .

[12]  Andrey Bakin,et al.  Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer , 2007 .

[13]  Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering , 2008 .

[14]  Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition , 2009 .