A class of boron-rich solid-state neutron detectors

Real-time solid-state neutron detectors have been fabricated from semiconducting boron–carbon alloys, deposited by plasma-enhanced chemical vapor deposition. Single neutrons were detected and signals induced by gamma rays were determined to be insignificant. The source gas closo-1,2-dicarbadodecaborane (ortho-carborane) was used to fabricate the boron–carbon alloys with only the natural isotopic abundance of 10B. Devices made of thicker boron–carbon alloy layers enriched in 10B could lead to increased detection efficiency and active diodes could use the inherent micron scale spatial resolution, increasing the range of possible applications.

[1]  P. G. Snyder,et al.  Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor deposition , 1996 .

[2]  R. W. Olsen,et al.  Thermal neutron detection with cadmium1−x zincx telluride semiconductor detectors , 1996 .

[3]  Y. Kumashiro,et al.  Thermal neutron irradiation experiments on 10BP single-crystal wafers☆ , 1988 .

[4]  J. Lin,et al.  Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes , 1997 .

[5]  Semi-insulating bulk GaAs thermal neutron imaging arrays , 1995 .

[6]  J. Lund,et al.  Boron Phosphide on Silicon for Radiation Detectors , 1989 .

[7]  P. Dowben,et al.  The properties of boron carbide/silicon heterojunction diodes fabricated by Plasma-Enhanced Chemical Vapor Deposition , 1994 .

[8]  F. Keith Perkins,et al.  Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation , 1994 .

[9]  J. I. Brand,et al.  Boron carbide/n-silicon carbide heterojunction diodes , 2001 .

[10]  C. J. Smith,et al.  Stoichiometric effects on the optical properties of LiInSe2 , 1989 .

[11]  D. Mcilroy,et al.  Nickel doping of boron–carbon alloy films and corresponding Fermi level shifts , 1997 .

[12]  H. R. Kim,et al.  Fabrication of boron‐carbide/boron heterojunction devices , 1996 .

[13]  P. Dowben,et al.  Sputter deposition of high resistivity boron carbide , 1998 .

[14]  D. Mcilroy,et al.  Nickel doping of boron carbide grown by plasma enhanced chemical vapor deposition , 1996 .

[15]  G. Ramseyer,et al.  Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes , 1992 .

[16]  T. Kamijoh,et al.  Blue‐band emission in LiInS2 crystals , 1980 .

[17]  Hiroshi Kitaguchi,et al.  Silicon semiconductor detectors for various nuclear radiations , 1995 .

[18]  G. Knoll Radiation detection and measurement , 1979 .

[19]  Victor Perez-Mendez,et al.  High efficiency neutron sensitive amorphous silicon pixel detectors , 1994 .