Improvement of color separation characteristics of a side-illuminated color photo sensor

For easy color photography, we have proposed a method of irradiating a silicon photosensor from the side. This color imaging method applies a simple pixel structure without color filters, and prevents the generation of false colors and moire patterns. A test chip was fabricated using a 0.35 µm complementary metal–oxide–semiconductor 1-poly 4-metal process. The chip dimensions are 5000 × 5000 µm2. The pixel layout structure that we proposed previously was remodeled. We confirmed that the four colors blue, green, red, and near-infrared are isolated in the normal color wavelength range in a light irradiation experiment.

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