Shallow donors in GaN—The binding energy and the electron effective mass
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Theeradetch Detchprohm | Isamu Akasaki | A. Graber | Bruno K. Meyer | I. Akasaki | B. Meyer | T. Detchprohm | D. Volm | H. C. Alt | A. Amano | H. Alt | D. Volm | A. Graber | A. Amano
[1] Khan,et al. Electron-spin-resonance studies of donors in wurtzite GaN. , 1993, Physical review. B, Condensed matter.
[2] S. Pantelides. The electronic structure of impurities and other point defects in semiconductors , 1978 .
[3] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[4] Marc Ilegems,et al. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN , 1973 .
[5] G. Shortley,et al. The Theory of Atomic Spectra , 1935 .
[6] K. Pressel,et al. GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique , 1994 .
[7] H. Amano,et al. Growth of single crystal GaN substrate using hydride vapor phase epitaxy , 1990 .
[8] Bo Monemar,et al. Luminescence in epitaxial GaN : Cd , 1974 .
[9] J. S. Blakemore. Semiconductor Statistics , 1962 .