Analysis of the kink effect in MOS transistors

An analysis of the kink effect in MOS transistors that provides a comprehensive view of the kink effect in bulk silicon MOSFETs and SOI devices is presented. This analysis enables a quantitative description of the excess drain current to be obtained for room and liquid-helium temperatures. In particular, it is found that the kink effect in a MOS transistor can be simply modeled by a body effect. >

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