论文信息 - The effect of static dielectric constant on the band structure in heavily doped silicon

The effect of static dielectric constant on the band structure in heavily doped silicon

This paper discusses dependence of the static dielectric constant on the impurity concentration and its influence on density of states behavior in n-type heavily doped silicon. Quantitative results of the calculations of the density of states and conduction and valence band shifts are presented for the doping concentration range 10/sup 17/-10/sup 21/cm/sup -3/.

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