论文信息 - Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm - 字舞流文

Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm

N. Zotova | S. Karandashev | B. Matveev | M. Remennyi | N. Stus' | N. Tarakanova

[1] J. Varesi,et al. Negative luminescence from MWIR HgCdTe/Si devices , 2003 .

[2] N. Zotova,et al. Towards longwave (5-6 /spl mu/m) LED operation at 80/spl deg/C: injection or extraction of carriers? , 2002 .

[3] H. R. Hardaway,et al. Mid-infrared gas detection using optically immersed, room-temperature, semiconductor devices , 2002 .

[4] A. Podoltsev,et al. Current crowding in InAsSb light-emitting diodes , 2001 .

[5] Nonna V. Zotova,et al. Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range , 2001, SPIE OPTO.

[6] H. R. Hardaway,et al. Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells , 1998 .

[7] Neil T. Gordon,et al. Uncooled InSb/In1−xAlxSb mid‐infrared emitter , 1994 .

[8] Gerald B. Stringfellow,et al. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy , 1990 .

[9] J. G. Pasko,et al. Backside-illuminated InAs/1-x/Sb/x/-InAs narrow-band photodetectors , 1977 .