论文信息 - Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors

Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors

Schottky AlxGa1−xN photodetectors were developed for solar ultraviolet A and B detection. Modeling is performed by developing programs of simulation leading to the most suitable device structure such as doping density, semiconductor thickness, etc. Simulations allow us to determine the most appropriate parameters

[1] Manijeh Razeghi,et al. Semiconductor ultraviolet detectors , 1996 .

[2] Pierre Gibart,et al. AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity , 1998 .

[3] R. Davis. III-V nitrides for electronic and optoelectronic applications , 1991, Proc. IEEE.

[4] H. Morkoç,et al. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .

[5] R. Dimitrov,et al. Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy , 1998 .

[6] Hadis Morkoç,et al. Emerging gallium nitride based devices , 1995, Proc. IEEE.

[7] M. Asif Khan,et al. Visible-blind ultraviolet photodetectors based on GaN p-n junctions , 1995 .

[8] M. Asif Khan,et al. Schottky barrier photodetector based on Mg‐doped p‐type GaN films , 1993 .

[9] Manasreh. Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition. , 1996, Physical review. B, Condensed matter.

[10] Bernard Beaumont,et al. METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS , 1999 .

[11] Properties of a photovoltaic detector based on an n-type GaN Schottky barrier , 1997 .