Gate driver integrated circuit for high-current and high-speed insulated-gate bipolar transistors used in hybrid electric vehicle and electric vehicle inverters

We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.

[1]  S. Wada,et al.  Large current capability 270V lateral IGBT with multi-emitter , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[2]  Kimimori Hamada,et al.  A 600 V 200 A low loss high current density trench IGBT for hybrid vehicles , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[3]  Kinya Nakatsu,et al.  The next-generation high power density inverter technology for vehicle , 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

[4]  Takeshi Tokuyama,et al.  A novel direct water and Double-Sided Cooled Power Module for HEV/EV inverter , 2014, 2014 International Conference on Electronics Packaging (ICEP).

[5]  Kinya Nakatsu,et al.  A novel direct water and double-sided cooled power module and a compact inverter for electrified vehicles , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).