In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge2Sb2Te5
暂无分享,去创建一个
[1] Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5 , 2011 .
[2] J. Kossut,et al. Structural Properties of MnTe, ZnTe, and ZnMnTe , 2004 .
[3] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[4] S. Elliott,et al. Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5memory alloy , 2011 .
[5] Luping Shi,et al. Synthesis and Characteristics of a Phase‐Change Magnetic Material , 2008 .
[6] David J. H. Cockayne,et al. Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials , 2011 .
[7] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .
[8] J. Coleman,et al. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials , 2011, Science.
[9] Xing Hu,et al. A study of electronic structure and lattice dynamics of CoSb3 skutterudite , 2010 .
[10] H. Shingai,et al. Triple-Layer Rewritable Disc with Sb-Based Phase-Change Material , 2010 .
[11] N. Yamada,et al. Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory , 1991 .
[12] H. Wong,et al. Nanoscale phase change memory materials. , 2012, Nanoscale.
[13] G. Kresse,et al. Ab initio molecular dynamics for liquid metals. , 1993 .
[14] Andrea L. Lacaita,et al. Phase‐change memories , 2008 .
[15] M. Tsai,et al. Phase transformation in Mg–Sb thin films , 2010 .
[16] K Schulten,et al. VMD: visual molecular dynamics. , 1996, Journal of molecular graphics.
[17] K. Gopalakrishnan,et al. Phase change memory technology , 2010, 1001.1164.
[18] H. Wong,et al. Crystallization times of Ge–Te phase change materials as a function of composition , 2009 .
[19] R. Zhao,et al. Origin of ferromagnetism and the design principle in phase-change magnetic materials , 2011 .
[20] Matthias Wuttig,et al. Resonant bonding in crystalline phase-change materials. , 2008, Nature materials.
[21] H.-S. Philip Wong,et al. Phase Change Memory , 2010, Proceedings of the IEEE.
[22] Noboru Yamada,et al. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. , 2011, Nature materials.
[23] R. O. Jones,et al. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe , 2007 .
[24] Songlin Feng,et al. Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory , 2004 .
[25] K. Burke,et al. Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)] , 1997 .
[26] S. Raoux,et al. The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory , 2011 .
[27] Alireza Saeed-Akbari,et al. Nitrogen in chromium–manganese stainless steels: a review on the evaluation of stacking fault energy by computational thermodynamics , 2013, Science and technology of advanced materials.
[28] W. J. Wang,et al. Breaking the Speed Limits of Phase-Change Memory , 2012, Science.
[29] Tao Liu,et al. A Circadian Rhythm Orchestrated by Histone Deacetylase 3 Controls Hepatic Lipid Metabolism , 2011, Science.
[30] Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation , 2011 .
[31] T. Tang,et al. Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory , 2007 .
[32] Vogl,et al. Generalized Kohn-Sham schemes and the band-gap problem. , 1996, Physical review. B, Condensed matter.
[33] T. Lee,et al. Structural role of vacancies in the phase transition of Ge 2 Sb 2 Te 5 memory materials , 2011 .
[34] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[35] Yoshiyuki Kageyama,et al. Completely Erasable Phase Change Optical Disk , 1992 .
[36] Yihong Wu,et al. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells , 2008 .
[37] G. Aromí,et al. Synthesis of 3d metallic single-molecule magnets , 2006 .
[38] Y. Fukuma,et al. Carrier-enhanced ferromagnetism in Ge1−xMnxTe , 2002 .
[39] Junji Tominaga,et al. The Effects of Metal-Doped GeSbTe Films on Light Scattering-Mode Super-Resolution Near-Field Structure (Super-RENS) , 2001 .
[40] T. Hsieh,et al. Phase transition behaviors of Mo- and nitrogen-doped Ge2Sb2Te5 thin films investigated by in situ electrical measurements , 2009 .
[41] Riccardo Mazzarello,et al. Magnetic Contrast in Phase‐Change Materials Doped with Fe Impurities , 2012, Advanced materials.
[42] S. Ziegler,et al. Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5 , 2004 .
[43] A. Fert,et al. The emergence of spin electronics in data storage. , 2007, Nature materials.
[44] M. Tsai,et al. C-Sb Materials as Candidate for Phase-Change Memory , 2011, IEEE Transactions on Magnetics.
[45] R. O. Jones,et al. Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge 2 Sb 2 Te 5 , 2009 .
[46] Wei Zhang,et al. Magnetic Properties of Crystalline and Amorphous Phase‐Change Materials Doped with 3d Impurities , 2012, Advanced materials.
[47] Y.C. Chen,et al. Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory , 2007, 2007 IEEE International Electron Devices Meeting.
[48] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[49] Eric Pop,et al. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes , 2011, Science.
[50] R. O. Jones,et al. Publisher's Note: Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge2Sb2Te5 , 2009 .
[51] S. Elliott,et al. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. , 2008, Nature materials.
[52] X. Miao,et al. Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition , 2011 .
[53] Matthias Wuttig,et al. Towards a universal memory? , 2005, Nature materials.
[54] S. Elliott,et al. Ab Initio computer simulation of the early stages of crystallization: application to Ge(2)Sb(2)Te(5) phase-change materials. , 2011, Physical review letters.
[55] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .
[57] Tow Chong Chong,et al. Phase change random access memory cell with superlattice-like structure , 2006 .