论文信息 - Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy - 字舞流文

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

O. Pchelyakov | V. Preobrazhenskii | E. A. Emel’yanov | M. Putyato | B. Semyagin | A. Vasev | A. Vasilenko | D. F. Feklin