论文信息 - AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution - 字舞流文

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

O. Ambacher | M. Prescher | L. Kirste | R. Quay | K. Köhler | V. Polyakov | S. Müller | R. Aidam | P. Brückner | S. Breuer | E. Ture | B. Godejohann