Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions

The VO defect is one of the major defects produced by irradiation in Cz-grown Si. Its presence in the infrared spectra is manifested by a localized vibration mode (LVM) band at 829 cm−1. Upon annealing, the decay of this band is accompanied by the emergence in the spectra of another LVM band at 890 cm−1 generally attributed to the VO2 defect. The annealing of the VO center is discussed in the literature by considering mainly two reaction processes in neutron irradiated material, that is, VO+SiI→Oi and VO+Oi→VO2, which could occur in parallel. There are some points, however, which cannot be explained within the above reaction scheme. In this article we report infrared, x-ray, transmission electron microscopy and selective etching investigations on the annealing behavior of the VO defect, in neutron-irradiated Cz-grown Si samples, subjected to various high temperature–high pressure (HTHP) treatments prior to the irradiation. The contribution of each of the above two reactions to the whole annealing process ...

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