论文信息 - Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

We describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ∼350 A. Transverse confinement results in the splitting of the n=1 heavy hole‐electron transition. Three of these levels are observed in the excitation spectrum. The exciton energies agree with the theoretical predictions based on a new method of solving the two‐dimensional effective mass Schrodinger equation.

[1] Bryant,et al. Electronic structure of ultrasmall quantum-well boxes. , 1987, Physical review letters.

[2] Henryk Temkin,et al. Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes , 1987 .

[3] Henryk Temkin,et al. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers , 1985 .

[4] R. A. Logan,et al. Toward quantum well wires: Fabrication and optical properties , 1982 .

[5] Stephen J. Pearton,et al. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces , 1986 .

[6] B. S. Garbow,et al. Matrix Eigensystem Routines — EISPACK Guide , 1974, Lecture Notes in Computer Science.

[7] Suzuki,et al. Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties. , 1988, Physical review. B, Condensed matter.

[8] Hiroyuki Sakaki,et al. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures , 1980 .

[9] M. Reed,et al. Spatial quantization in GaAs–AlGaAs multiple quantum dots , 1986 .

[10] Ohnishi,et al. Electronic structure of the superatom: A quasiatomic system based on a semiconductor heterostructure. , 1986, Physical review letters.