A low energy limit to boron channeling in silicon

Both experimental profiles and Monte Carlo simulations have shown that a channeling tail is unavoidable in the implantation of boron into silicon at 5 keV, even though high‐index channeling does not occur. A model is proposed to explain this disappearance of high‐index channeling at low energies, based on simple geometrical considerations of ion deflections predicted by a binary collision potential.