Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology, Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LETs provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s),.

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