Key power semiconductor device concepts for the next decade

The paper presents a comparison of the latest device concepts like the super junction MOSFET, the IGBT and the actual trends in SiC devices. All these devices are capable of blocking voltages in the range of 1000 V, and optimized for different fields of applications. Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. MOSFETs and JFETs capable of blocking 1800 V with a specific on-resistance of 47 m/spl Omega/ cm/sup 2/ are SiC devices attractive for the system designer.

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