Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
暂无分享,去创建一个
The disappearance of RHEED intensity oscillation by increasing growth temperature in GaAs MBE on a stepped surface has been studied theoretically based on the 2d-nucleation and surface diffusion theories. By comparing the present and the published RHEED results, we get the surface diffusion length (λs) and the diffusion coefficient (Ds) of Ga atoms on the (100) GaAs surface respectively as λs[cm]=4.0 ×10-8 exp (0.3/kT) and Ds[cm2/s]=1.6 ×10-2 exp (-1.1/kT).