Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Abstract Metal–oxide–semiconductor (MOS) capacitors incorporating atomic-layer-deposition (ALD) HfZrLaO high- κ gate dielectric were fabricated and investigated. The equivalent oxide thickness (EOT) is 0.68 nm and the gate leakage current density ( J g ) is only 9.3 × 10 −1 A/cm 2 . The time-dependence dielectric breakdown (TDDB) behavior agrees with the percolation model, and the TDDB characteristics are consistent with the thermochemical E -model for lifetime projection. The experimental results show that the Weibull slopes are almost independent of capacitor area and stress conditions. The field acceleration parameter ( γ ) and activation energy (Δ H 0 ) are determined around 5.9–7.0 cm/MV and 0.54–0.60 eV, respectively. At 85 °C, the maximum voltage projected for 10-years TDDB lifetime is 1.87 V.

[1]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[2]  D. Misra,et al.  Temperature Effects on Breakdown Characteristics of High- $\kappa$ Gate Dielectrics With Metal Gates , 2008, IEEE Transactions on Device and Materials Reliability.

[3]  Luigi Pantisano,et al.  Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey , 2005, Microelectron. Reliab..

[4]  V. Mikhelashvili,et al.  Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics , 2005, Microelectron. Reliab..

[5]  J. McPherson,et al.  UNDERLYING PHYSICS OF THE THERMOCHEMICAL E MODEL IN DESCRIBING LOW-FIELD TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SIO2 THIN FILMS , 1998 .

[6]  L. Terman.  An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .

[7]  B. E. White,et al.  Impact of Zr addition on properties of atomic layer deposited HfO2 , 2006 .

[8]  Fu-Chien Chiu,et al.  Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs , 2008 .

[9]  J. Stathis.  Percolation models for gate oxide breakdown , 1999 .

[10]  S. Samavedam,et al.  Hafnium zirconate gate dielectric for advanced gate stack applications , 2007 .

[11]  S. McAlister,et al.  High work function Ir/sub x/Si gates on HfAlON p-MOSFETs , 2006, IEEE Electron Device Letters.

[12]  T. Ma,et al.  Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics , 2002, IEEE Electron Device Letters.

[13]  J. Schaeffer,et al.  Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer , 2008, IEEE Electron Device Letters.

[14]  G. Lo,et al.  Wide $V_{\rm fb}$ and $V_{\rm th}$ Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics , 2007, IEEE Electron Device Letters.

[15]  G. Bersuker,et al.  Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate , 2007 .

[16]  X. Wang,et al.  Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion , 2009, Microelectron. Reliab..

[17]  Hung-Wen Chen,et al.  Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics , 2009 .

[18]  J. McPherson,et al.  Thermochemical description of dielectric breakdown in high dielectric constant materials , 2003 .

[19]  A. Chin,et al.  Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT , 2009, IEEE Electron Device Letters.

[20]  Shao-You Deng,et al.  Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric , 2006 .

[21]  John Robertson,et al.  Interfaces and defects of high-K oxides on silicon , 2005 .