Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters L<inf>P</inf> and L<inf>2</inf> in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (D<inf>ntop</inf>) increases from 0.8 × cm<sup>−2</sup> to 1.2 × cm<sup>−2</sup>, progressive performance with Fß from 805 V to 711 V and R<inf>on, sp</inf> from 86.49 mΩ· cm<sup>2</sup> to 80.56 mΩ·cm<sup>2</sup> is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.

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