20nm Line/space patterns in HSQ fabricated by EUV interference lithography

An evaluation of hydrogen silsesquioxane (HSQ) for EUV lithography is presented. The effects of bake temperature and developer concentration on the ultimate resolution, sensitivity and contrast are investigated. It is demonstrated that HSQ as a negative-tone photoresist provides patterns with half-pitches as small as 20nm with EUV interference lithography. SEM micrographs show that the low line-edge roughness of the patterns is accompanied with the high-quality cross-sectional profiles. This high resolution and pattern quality are achieved through development in high-concentration developers for long development times, which is in line with previous results obtained with e-beam lithography.

[1]  Henry I. Smith,et al.  Hydrogen SilsesQuioxane, a high-resolution negative tone e-beam resist, investigated for its applicability in photon-based lithographies , 2002 .

[2]  Yasin Ekinci,et al.  Photon-beam lithography reaches 12.5nm half-pitch resolution , 2007 .

[3]  W. Cho,et al.  Electron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications , 2005 .

[4]  P. Nealey,et al.  Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography , 2005 .

[5]  G. Schmid,et al.  Nonaqueous development of silsesquioxane electron beam resist , 2004 .

[6]  Paul R. Berger,et al.  Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography , 2003 .

[7]  M. Loboda,et al.  Properties of a ‐ SiO x : H Thin Films Deposited from Hydrogen Silsesquioxane Resins , 1998 .

[8]  Chang-Chung Yang,et al.  The structures and properties of hydrogen silsesquioxane (HSQ) films produced by thermal curing , 2002 .

[9]  Zheng Cui,et al.  Effects of developing conditions on the contrast and sensitivity of hydrogen silsesquioxane , 2006 .

[10]  Anne-Marie Goethals,et al.  Progress in EUV Resist Performance , 2006 .

[11]  Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors , 2006 .

[12]  Heinrich Kurz,et al.  Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist , 2005 .

[13]  Heinrich Kurz,et al.  Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist , 2003 .