High performance laser diode integrated with monitoring photodiode (LD+PD) fabricated with the precisely controlled dry etching technique

The dry etching technique is applied to fabricate the facets of LD+PD. Roughness and tilted angle of the etched facets are /spl plusmn/4 nm and 1 deg. respectively. Current of the LD+PD is 6.5 mA. The aging test demonstrates stable operation of the device.