Ultra-Low voltage Tunable transconductor Based on Bulk-Driven quasi-Floating-gate Technique

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-°oating- gate technique (BD-QFG). This technique leads to signicant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of � 300mV and low power consumption of 18 � W. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C multifunctionlter is presented as one of the possible applications. The simulation results using 0.18 � m CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

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