First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

This is the first demonstration of strained AlN/GaN/AlN quantum well FETs on SiC substrates. The device performance, though highly encouraging for the gate lengths used, can be significantly enhanced by scaling [4]. But significant improvements are expected by ensuring the absence of the 2D hole gas, and by exploring high temperature growth of thick AlN buffer layer on SiC. This can potentially reduce the generation of threading dislocations in the subsequent layers and enhance the FET performance, by improving the transport properties.