Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)‐(111)B facet structures for edge quantum wires

The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)‐(111)B mesas.

[1]  H. L. Stormer,et al.  Formation of a high quality two-dimensional electron gas on cleaved GaAs , 1990 .

[2]  H. Meier,et al.  Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures , 1989 .

[3]  T. Fukui,et al.  New GaAs quantum wires on , 1989 .

[4]  P. Cohen,et al.  Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE , 1987 .

[5]  M. Kawashima,et al.  Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy , 1986 .

[6]  B. F. Lewis,et al.  Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements , 1986 .

[7]  T. Sakamoto,et al.  Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system , 1985 .

[8]  B. Joyce,et al.  Dynamic RHEED observations of the MBE growth of GaAs , 1984 .

[9]  T. Drummond,et al.  Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures , 1983 .

[10]  Hiroyuki Sakaki,et al.  Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures , 1980 .

[11]  A. Cho,et al.  Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition , 1977 .

[12]  S. Nagata,et al.  Self‐masking selective epitaxy by molecular‐beam method , 1977 .