Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

This paper proposes the adoption of the inherent emitter stray inductance <inline-formula><tex-math notation="LaTeX"> $L_{{\rm{eE}}}$</tex-math></inline-formula> in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

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