论文信息 - A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption

A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption

We have fabricated and studied single lateral phase-change random-access-memory (PRAM), which has a confined Ge2Sb2Te5 (GST) channel connected by two wide TiN electrodes of relatively low resistivity. Its switching current for Reset operation could be as low as 4–20 µA, about one or two orders of magnitude lower than that of the conventional bottom contact PRAM cell. Its corresponding switching power for Reset operation is about 2–4 µW. The reason for such ultra low Reset current and power could be that Joule heating occurred mainly in the GST channel, instead of the resistive heater in the conventional PRAM cell.

[1] Sumio Hosaka,et al. Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories , 2006 .

[2] S. Hudgens,et al. Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications , 2003 .

[3] Sumio Hosaka,et al. Dependences of Electrical Properties of Thin GeSbTe and AgInSbTe Films on Annealing , 2005 .

[4] Sumio Hosaka,et al. Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing , 2006 .