2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts

Two X sixty-four linear photodiode arrays on the base of HgCdTe MBE grown layers with CCD silicon readouts were designed, fabricated and tested. It is shown that detectivity for the given arrays even with skimming mode used for long integration times that is need for large square n-p-junctions used and cut-off wavelength of 12.2 micrometer was near the ultimate performance limit.